Document Type

Article

Publication Date

12-22-2011

Abstract

We develop highly‐resistive (i.e. low‐carrier‐density) and ultrafast Fe‐ion implanted InGaAs layers for the applications of THz photomixer and photoconductive switch. The measured Hall mobility, sheet resistance, carrier density, and carrier lifetime of the optimized 1.2‐μm‐thick Fe‐implanted InGaAs layer are 3.4×102 cm2/Vs, 0.24 MΩ, 6.5×1014 cm−3, and 0.13ps, respectively.

Comments

Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

DOI

10.1063/1.3666684

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Physics Commons

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