We develop highly‐resistive (i.e. low‐carrier‐density) and ultrafast Fe‐ion implanted InGaAs layers for the applications of THz photomixer and photoconductive switch. The measured Hall mobility, sheet resistance, carrier density, and carrier lifetime of the optimized 1.2‐μm‐thick Fe‐implanted InGaAs layer are 3.4×102 cm2/Vs, 0.24 MΩ, 6.5×1014 cm−3, and 0.13ps, respectively.
Shin, J. H. et al. "Highly Resistive and Ultrafast Fe‐Ion Implanted InGaAs for the Applications of THz Photomixer and Photoconductive Switch." AIP Conference Proceedings 1399.1 (Dec 2011): 935-936.