Highly Resistive and Ultrafast Fe‐Ion Implanted InGaAs for the Applications of THz Photomixer and Photoconductive Switch

Authors

J. H. Shin
K. H. Park
N. Kim
C. W. Lee
Eunsup Daniel Shim, Sacred Heart UniversityFollow
Y. C. Kim
D. S. Yee
J. O. Kim
S. J. Lee
S. K. Noh

Document Type

Peer-Reviewed Article

Publication Date

12-2011

Abstract

We develop highly‐resistive (i.e. low‐carrier‐density) and ultrafast Fe‐ion implanted InGaAs layers for the applications of THz photomixer and photoconductive switch. The measured Hall mobility, sheet resistance, carrier density, and carrier lifetime of the optimized 1.2‐μm‐thick Fe‐implanted InGaAs layer are 3.4×102 cm2/Vs, 0.24 MΩ, 6.5×1014 cm−3, and 0.13ps, respectively.

DOI

10.1063/1.3666684

Recommended Citation

Shin, J. H. et al. "Highly Resistive and Ultrafast Fe‐Ion Implanted InGaAs for the Applications of THz Photomixer and Photoconductive Switch." AIP Conference Proceedings 1399.1 (Dec 2011): 935-936.